Show Hamamatsu Avalanche Photo Diode 1313014505
This is all the information about APD 1313014505. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1313014505 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C13 |
| Break-through voltage: |
446 V |
| Voltage for Gain 100 (T=+25°C): |
418.2 V |
| Dark current: |
10.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
291 |
| Position in Box: |
35 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10205 |
| |
|
| Shipment: |
|
| Grid number: |
331 |
| Position in grid: |
6 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
06. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
23. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
2 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
24. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 420.0868995 V T = -25 °C: 382.6905253 V |
| Voltage for Gain 150: |
T = +20 °C: 428.10713 V T = -25 °C: 390.6741538 V |
| Voltage for Gain 200: |
T = +20 °C: 432.5783954 V T = -25 °C: 395.1291637 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.459685438 V-1 T = -25 °C: 4.294095645 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.52183287 V-1 T = -25 °C: 9.08769984 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.54510323 V-1 T = -25 °C: 14.09957151 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9979313 V T = -25 °C: 411.1586028 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
