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Show Hamamatsu Avalanche Photo Diode 0618005349


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Subdetector specification:  
Serial: 0618005349
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: A07
Break-through voltage: 447 V
Voltage for Gain 100 (T=+25°C): 420.1 V
Dark current: 18 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 410
Position in Box: 6
EP1 batch: none
EP1 batch after irradiation: 10646
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 418.9617823 V     T = -25 °C: 382.6154557 V
Voltage for Gain 150: T = +20 °C: 427.0078763 V     T = -25 °C: 390.5024237 V
Voltage for Gain 200: T = +20 °C: 431.494162 V     T = -25 °C: 394.8213017 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.507247472 V-1     T = -25 °C: 4.494051878 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.615796629 V-1     T = -25 °C: 8.647974926 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 15.22827023 V-1     T = -25 °C: 15.09750006 V-1
Break-through voltage: T = +20 °C: 439.993921 V     T = -25 °C: 410.0078114 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 22:08:42 CEST jreher Updated APD characteristics via API.
31. Mar 2021 14:14:12 CEST jreher Updated box and position via API.
08. Feb 2021 11:13:02 CET jreher Updated APD location via API.
05. Feb 2021 17:07:56 CET jreher Updated APD batch assignment via API.
03. Feb 2021 18:08:13 CET jreher Updated APD location via API.
28. Apr 2014 15:40:36 CEST Tobias Imported from Hamamatsu datasheet.