Show Hamamatsu Avalanche Photo Diode 1312014389
This is all the information about APD 1312014389. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1312014389 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C09 |
Break-through voltage: |
440 V |
Voltage for Gain 100 (T=+25°C): |
411.7 V |
Dark current: |
8.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
323 |
Position in Box: |
28 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10508 |
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Shipment: |
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Grid number: |
326 |
Position in grid: |
11 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 412.6445841 V T = -25 °C: 375.8105497 V |
Voltage for Gain 150: |
T = +20 °C: 420.5932186 V T = -25 °C: 383.6900893 V |
Voltage for Gain 200: |
T = +20 °C: 424.9689506 V T = -25 °C: 388.0448056 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.345513551 V-1 T = -25 °C: 4.639136306 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.30004792 V-1 T = -25 °C: 9.294108077 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.567055 V-1 T = -25 °C: 14.49747139 V-1 |
Break-through voltage: |
T = +20 °C: 439.268794 V T = -25 °C: 402.8553596 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history