Show Hamamatsu Avalanche Photo Diode 1311014380
This is all the information about APD 1311014380. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1311014380 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B13 |
Break-through voltage: |
448 V |
Voltage for Gain 100 (T=+25°C): |
419.3 V |
Dark current: |
10.4 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
323 |
Position in Box: |
19 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10767 |
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Shipment: |
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Grid number: |
326 |
Position in grid: |
2 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 419.7306729 V T = -25 °C: 383.1753551 V |
Voltage for Gain 150: |
T = +20 °C: 427.5925801 V T = -25 °C: 390.9779668 V |
Voltage for Gain 200: |
T = +20 °C: 431.9389544 V T = -25 °C: 395.3072229 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.380034255 V-1 T = -25 °C: 4.577242295 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.562164444 V-1 T = -25 °C: 9.169674952 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.93135821 V-1 T = -25 °C: 14.36240153 V-1 |
Break-through voltage: |
T = +20 °C: 443.5513084 V T = -25 °C: 410.9119111 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history