Show Hamamatsu Avalanche Photo Diode 1310014278
This is all the information about APD 1310014278. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1310014278 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G08 |
Break-through voltage: |
437 V |
Voltage for Gain 100 (T=+25°C): |
408.3 V |
Dark current: |
8.9 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
323 |
Position in Box: |
12 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10766 |
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Shipment: |
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Grid number: |
321 |
Position in grid: |
15 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 408.8420644 V T = -25 °C: 372.6745923 V |
Voltage for Gain 150: |
T = +20 °C: 416.7803798 V T = -25 °C: 380.4821234 V |
Voltage for Gain 200: |
T = +20 °C: 421.1781529 V T = -25 °C: 384.8150488 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.585458832 V-1 T = -25 °C: 4.411847015 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.116111118 V-1 T = -25 °C: 8.616539395 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.13566544 V-1 T = -25 °C: 14.99240552 V-1 |
Break-through voltage: |
T = +20 °C: 431.9966876 V T = -25 °C: 400.6194523 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history