Show Hamamatsu Avalanche Photo Diode 1310014274
This is all the information about APD 1310014274. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1310014274 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A07 |
| Break-through voltage: |
440 V |
| Voltage for Gain 100 (T=+25°C): |
412.5 V |
| Dark current: |
8.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
323 |
| Position in Box: |
8 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10766 |
| |
|
| Shipment: |
|
| Grid number: |
321 |
| Position in grid: |
11 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 412.6205296 V T = -25 °C: 376.136275 V |
| Voltage for Gain 150: |
T = +20 °C: 420.6525504 V T = -25 °C: 384.0570235 V |
| Voltage for Gain 200: |
T = +20 °C: 425.0926192 V T = -25 °C: 388.4603754 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.298588335 V-1 T = -25 °C: 4.502165826 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.036021995 V-1 T = -25 °C: 8.809382567 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.07760611 V-1 T = -25 °C: 15.33959713 V-1 |
| Break-through voltage: |
T = +20 °C: 437.2709142 V T = -25 °C: 404.004886 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
