Show Hamamatsu Avalanche Photo Diode 1310014266
This is all the information about APD 1310014266. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1310014266 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
436 V |
| Voltage for Gain 100 (T=+25°C): |
406.9 V |
| Dark current: |
11.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
327 |
| Position in Box: |
50 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10766 |
| |
|
| Shipment: |
|
| Grid number: |
321 |
| Position in grid: |
3 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 407.3744098 V T = -25 °C: 370.6152808 V |
| Voltage for Gain 150: |
T = +20 °C: 415.4008725 V T = -25 °C: 378.5326692 V |
| Voltage for Gain 200: |
T = +20 °C: 419.8363893 V T = -25 °C: 382.9222301 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.37008198 V-1 T = -25 °C: 4.3505371 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.418025324 V-1 T = -25 °C: 9.286016977 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.46097969 V-1 T = -25 °C: 14.46607388 V-1 |
| Break-through voltage: |
T = +20 °C: 435.3529918 V T = -25 °C: 398.6921438 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
