Show Hamamatsu Avalanche Photo Diode 1310014264
This is all the information about APD 1310014264. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1310014264 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D01 |
| Break-through voltage: |
430 V |
| Voltage for Gain 100 (T=+25°C): |
402.9 V |
| Dark current: |
7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
327 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10766 |
| |
|
| Shipment: |
|
| Grid number: |
321 |
| Position in grid: |
1 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 403.6980258 V T = -25 °C: 366.8359453 V |
| Voltage for Gain 150: |
T = +20 °C: 411.7200204 V T = -25 °C: 374.7922858 V |
| Voltage for Gain 200: |
T = +20 °C: 416.1649091 V T = -25 °C: 379.2137204 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.583822308 V-1 T = -25 °C: 4.570031881 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.020694475 V-1 T = -25 °C: 9.033324671 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.97879933 V-1 T = -25 °C: 13.96251925 V-1 |
| Break-through voltage: |
T = +20 °C: 430.0116941 V T = -25 °C: 393.8031897 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
