Show Hamamatsu Avalanche Photo Diode 1310014246
This is all the information about APD 1310014246. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1310014246 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E10 |
| Break-through voltage: |
438 V |
| Voltage for Gain 100 (T=+25°C): |
409.7 V |
| Dark current: |
8.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
291 |
| Position in Box: |
33 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10205 |
| |
|
| Shipment: |
|
| Grid number: |
320 |
| Position in grid: |
3 |
| Arrival for irradiation: |
27. Oct 2016 |
| Sent for analysis after irradiation: |
02. Nov 2016 |
| Return for assembly: |
29. Nov 2016 |
| |
|
| Irradiation: |
|
| Date: |
31. Oct 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 410.2405746 V T = -25 °C: 373.3262567 V |
| Voltage for Gain 150: |
T = +20 °C: 418.2083782 V T = -25 °C: 381.1951542 V |
| Voltage for Gain 200: |
T = +20 °C: 422.6187234 V T = -25 °C: 385.5637043 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.418439316 V-1 T = -25 °C: 4.45618778 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.627391378 V-1 T = -25 °C: 8.751738733 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.01769011 V-1 T = -25 °C: 15.28392549 V-1 |
| Break-through voltage: |
T = +20 °C: 437.9948813 V T = -25 °C: 401.0134667 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
