Show Hamamatsu Avalanche Photo Diode 1310014240
This is all the information about APD 1310014240. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1310014240 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H07 |
| Break-through voltage: |
430 V |
| Voltage for Gain 100 (T=+25°C): |
404.8 V |
| Dark current: |
7.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
359 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10550 |
| |
|
| Shipment: |
|
| Grid number: |
319 |
| Position in grid: |
17 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
09. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 405.9557179 V T = -25 °C: 370.0906608 V |
| Voltage for Gain 150: |
T = +20 °C: 413.9311528 V T = -25 °C: 378.1090579 V |
| Voltage for Gain 200: |
T = +20 °C: 418.3737171 V T = -25 °C: 382.6663632 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.516275328 V-1 T = -25 °C: 4.52374552 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.841563621 V-1 T = -25 °C: 8.783015328 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.36448476 V-1 T = -25 °C: 15.38805169 V-1 |
| Break-through voltage: |
T = +20 °C: 427.693982 V T = -25 °C: 396.0439113 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history