Show Hamamatsu Avalanche Photo Diode 1309014234
This is all the information about APD 1309014234. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1309014234 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D15 |
| Break-through voltage: |
439 V |
| Voltage for Gain 100 (T=+25°C): |
412.6 V |
| Dark current: |
12.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
291 |
| Position in Box: |
28 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10204 |
| |
|
| Shipment: |
|
| Grid number: |
319 |
| Position in grid: |
11 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
09. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 412.5589108 V T = -25 °C: 376.3017695 V |
| Voltage for Gain 150: |
T = +20 °C: 420.4441714 V T = -25 °C: 384.072911 V |
| Voltage for Gain 200: |
T = +20 °C: 424.8622617 V T = -25 °C: 388.3868906 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.383226384 V-1 T = -25 °C: 4.536580518 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.583406388 V-1 T = -25 °C: 8.99797156 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 12.99112971 V-1 T = -25 °C: 14.05384205 V-1 |
| Break-through voltage: |
T = +20 °C: 429.6687898 V T = -25 °C: 402.180268 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history