Show Hamamatsu Avalanche Photo Diode 1308014116
This is all the information about APD 1308014116. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1308014116 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G09 |
| Break-through voltage: |
436.2 V |
| Voltage for Gain 100 (T=+25°C): |
409 V |
| Dark current: |
8.79 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
356 |
| Position in Box: |
16 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10541 |
| |
|
| Shipment: |
|
| Grid number: |
314 |
| Position in grid: |
1 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 409.207464 V T = -25 °C: 372.6776904 V |
| Voltage for Gain 150: |
T = +20 °C: 417.0708826 V T = -25 °C: 380.4948497 V |
| Voltage for Gain 200: |
T = +20 °C: 421.4284401 V T = -25 °C: 384.8165228 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.49026482 V-1 T = -25 °C: 4.38421428 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.894990512 V-1 T = -25 °C: 8.576605338 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.65186655 V-1 T = -25 °C: 14.91997921 V-1 |
| Break-through voltage: |
T = +20 °C: 435.7035058 V T = -25 °C: 399.4117722 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
