Show Hamamatsu Avalanche Photo Diode 1308014088
This is all the information about APD 1308014088. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1308014088 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G08 |
| Break-through voltage: |
435.2 V |
| Voltage for Gain 100 (T=+25°C): |
408 V |
| Dark current: |
7.76 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
45 |
| Position in Box: |
13 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10073 |
| |
|
| Shipment: |
|
| Grid number: |
312 |
| Position in grid: |
18 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
09. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 408.2298313 V T = -25 °C: 371.5322045 V |
| Voltage for Gain 150: |
T = +20 °C: 416.0496631 V T = -25 °C: 379.3845462 V |
| Voltage for Gain 200: |
T = +20 °C: 420.4002908 V T = -25 °C: 383.7008585 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.455205462 V-1 T = -25 °C: 4.618790523 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.367290867 V-1 T = -25 °C: 8.608315177 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.91839142 V-1 T = -25 °C: 15.04702303 V-1 |
| Break-through voltage: |
T = +20 °C: 430.0845221 V T = -25 °C: 398.8665185 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history