Show Hamamatsu Avalanche Photo Diode 1307014084
This is all the information about APD 1307014084. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1307014084 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C10 |
| Break-through voltage: |
440.9 V |
| Voltage for Gain 100 (T=+25°C): |
413.1 V |
| Dark current: |
8.75 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
356 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10541 |
| |
|
| Shipment: |
|
| Grid number: |
312 |
| Position in grid: |
15 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
09. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 414.1836687 V T = -25 °C: 377.5082631 V |
| Voltage for Gain 150: |
T = +20 °C: 422.0576739 V T = -25 °C: 385.3351282 V |
| Voltage for Gain 200: |
T = +20 °C: 426.44097 V T = -25 °C: 389.6633799 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.480844074 V-1 T = -25 °C: 4.425661231 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.890788172 V-1 T = -25 °C: 8.650316622 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.47730674 V-1 T = -25 °C: 15.16074467 V-1 |
| Break-through voltage: |
T = +20 °C: 439.94945 V T = -25 °C: 404.042414 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history