Show Hamamatsu Avalanche Photo Diode 1307014075
This is all the information about APD 1307014075. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1307014075 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E14 |
| Break-through voltage: |
441.9 V |
| Voltage for Gain 100 (T=+25°C): |
414 V |
| Dark current: |
7.87 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
45 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10073 |
| |
|
| Shipment: |
|
| Grid number: |
312 |
| Position in grid: |
9 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
09. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 414.435164 V T = -25 °C: 377.7315764 V |
| Voltage for Gain 150: |
T = +20 °C: 422.3614104 V T = -25 °C: 385.5522635 V |
| Voltage for Gain 200: |
T = +20 °C: 426.7417948 V T = -25 °C: 389.9500178 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.012799771 V-1 T = -25 °C: 4.474431928 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.541013999 V-1 T = -25 °C: 9.069855125 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.12821481 V-1 T = -25 °C: 14.91803484 V-1 |
| Break-through voltage: |
T = +20 °C: 439.1985755 V T = -25 °C: 405.8147473 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
