Show Hamamatsu Avalanche Photo Diode 1307014071
					
					This is all the information about APD 1307014071. If it is wrong, edit the data.
					
						
							| Subdetector specification: | 
							  | 
						
						
							| Serial: | 
							1307014071 | 
						
						
							| Type: | 
							Hamamatsu Avalanche Photo Diode | 
						
						
							| Detector: | 
							unassigned | 
						
						
							| Unit: | 
							unassigned | 
						
						
							| Preamp: | 
							0 | 
						
						
							| Current location: | 
							In transit to Mainz | 
						
						
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							  | 
						
						
							| Installation information: | 
							  | 
						
						
							| Label: | 
							none | 
						
						
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							| Manufacturer information: | 
							  | 
						
						
							| Wafer position: | 
							E09 | 
						
						
							| Break-through voltage: | 
							436.4 V | 
						
						
							| Voltage for Gain 100 (T=+25°C): | 
							407.8 V | 
						
						
							| Dark current: | 
							5.37 nA | 
						
						
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							| Screening Logistics: | 
							  | 
						
						
							| Available: | 
							Yes | 
						
						
							| Storage Box: | 
							45 | 
						
						
							| Position in Box: | 
							20 | 
						
						
							| EP1 batch: | 
							none | 
						
						
							| EP1 batch after irradiation: | 
							10073 | 
						
						
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							| Shipment: | 
							  | 
						
						
							| Grid number: | 
							312 | 
						
						
							| Position in grid: | 
							5 | 
						
						
							| Arrival for irradiation: | 
							02. Nov 2016 | 
						
						
							| Sent for analysis after irradiation: | 
							10. Nov 2016 | 
						
						
							| Return for assembly: | 
							09. Dec 2016 | 
						
						
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							| Irradiation: | 
							  | 
						
						
							| Date: | 
							04. Nov 2016 | 
						
						
							| Dose used: | 
							30 Gy | 
						
						
							| Temperature: | 
							20 °C | 
						
						
							| Position: | 
							1 | 
						
						
							| Bias voltage: | 
							350 V     (connected) | 
						
						
							|   | 
							  | 
						
						
							| Annealing: | 
							  | 
						
						
							| Date: | 
							none | 
						
						
							| Temperature: | 
							none | 
						
						
							| Duration: | 
							none | 
						
						
							|   | 
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							| Measurement results: | 
							  | 
						
						
							| Voltage for Gain 100: | 
							T = +20 °C: 408.4881122 V     T = -25 °C: 371.6529668 V | 
						
						
							| Voltage for Gain 150: | 
							T = +20 °C: 416.5811923 V     T = -25 °C: 379.4984923 V | 
						
						
							| Voltage for Gain 200: | 
							T = +20 °C: 420.9682438 V     T = -25 °C: 383.9213592 V | 
						
						
							| Gain/Voltage slope at M = 100: | 
							T = +20 °C: 4.53929355 V-1     T = -25 °C: 4.599873707 V-1 | 
						
						
							| Gain/Voltage slope at M = 150: | 
							T = +20 °C: 10.24850207 V-1     T = -25 °C: 9.564365826 V-1 | 
						
						
							| Gain/Voltage slope at M = 200: | 
							T = +20 °C: 12.8283022 V-1     T = -25 °C: 13.53265688 V-1 | 
						
						
							| Break-through voltage: | 
							T = +20 °C: 436.6520592 V     T = -25 °C: 399.5475334 V | 
						
						
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							| Notes: | 
							
								
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					Characteristics
					
						
							| Temperature | 
							Measurement | 
							Notes | 
						
						
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					Progression of the current during irradiation
					
						
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