Show Hamamatsu Avalanche Photo Diode 1306013948
This is all the information about APD 1306013948. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1306013948 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D07 |
| Break-through voltage: |
432.7 V |
| Voltage for Gain 100 (T=+25°C): |
404.5 V |
| Dark current: |
7.01 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
289 |
| Position in Box: |
50 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10202 |
| |
|
| Shipment: |
|
| Grid number: |
306 |
| Position in grid: |
17 |
| Arrival for irradiation: |
27. Oct 2016 |
| Sent for analysis after irradiation: |
02. Nov 2016 |
| Return for assembly: |
20. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
31. Oct 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 405.7043495 V T = -25 °C: 368.5244203 V |
| Voltage for Gain 150: |
T = +20 °C: 413.7043482 V T = -25 °C: 376.5178873 V |
| Voltage for Gain 200: |
T = +20 °C: 418.1385522 V T = -25 °C: 380.6889001 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.545497877 V-1 T = -25 °C: 4.292122426 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.715882418 V-1 T = -25 °C: 8.412774556 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.96119083 V-1 T = -25 °C: 13.9685757 V-1 |
| Break-through voltage: |
T = +20 °C: 433.0960017 V T = -25 °C: 396.8429732 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
