Show Hamamatsu Avalanche Photo Diode 1305013845
This is all the information about APD 1305013845. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1305013845 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A08 |
| Break-through voltage: |
449.2 V |
| Voltage for Gain 100 (T=+25°C): |
421 V |
| Dark current: |
7.38 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
416 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10653 |
| |
|
| Shipment: |
|
| Grid number: |
300 |
| Position in grid: |
17 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
26. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
421 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 421.2546993 V T = -25 °C: 384.6759551 V |
| Voltage for Gain 150: |
T = +20 °C: 429.1826723 V T = -25 °C: 392.5188333 V |
| Voltage for Gain 200: |
T = +20 °C: 433.5857107 V T = -25 °C: 396.8677668 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.494437805 V-1 T = -25 °C: 4.395562414 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.757629632 V-1 T = -25 °C: 8.60710852 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.30636265 V-1 T = -25 °C: 14.94800359 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0100627 V T = -25 °C: 412.8048198 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history