Show Hamamatsu Avalanche Photo Diode 1305013842
This is all the information about APD 1305013842. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1305013842 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A11 |
| Break-through voltage: |
448.9 V |
| Voltage for Gain 100 (T=+25°C): |
423.1 V |
| Dark current: |
9.25 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
416 |
| Position in Box: |
46 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10653 |
| |
|
| Shipment: |
|
| Grid number: |
300 |
| Position in grid: |
14 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
26. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
423.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 422.5152844 V T = -25 °C: 385.7937321 V |
| Voltage for Gain 150: |
T = +20 °C: 430.5052895 V T = -25 °C: 393.7089035 V |
| Voltage for Gain 200: |
T = +20 °C: 434.914612 V T = -25 °C: 398.1002767 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.346381119 V-1 T = -25 °C: 4.621368864 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.400045911 V-1 T = -25 °C: 9.153711877 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.4759668 V-1 T = -25 °C: 14.21082476 V-1 |
| Break-through voltage: |
T = +20 °C: 439.973514 V T = -25 °C: 412.3860996 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history