Show Hamamatsu Avalanche Photo Diode 1304013836
This is all the information about APD 1304013836. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1304013836 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B12 |
| Break-through voltage: |
448.8 V |
| Voltage for Gain 100 (T=+25°C): |
420.7 V |
| Dark current: |
9.74 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
416 |
| Position in Box: |
41 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10653 |
| |
|
| Shipment: |
|
| Grid number: |
300 |
| Position in grid: |
9 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
26. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
420.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 421.3120342 V T = -25 °C: 384.9613962 V |
| Voltage for Gain 150: |
T = +20 °C: 429.2403866 V T = -25 °C: 392.7895079 V |
| Voltage for Gain 200: |
T = +20 °C: 433.6442391 V T = -25 °C: 397.1220246 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.48145888 V-1 T = -25 °C: 4.642845528 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.733259908 V-1 T = -25 °C: 9.254287417 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.21760407 V-1 T = -25 °C: 14.52622871 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0026407 V T = -25 °C: 412.5632156 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
