Show Hamamatsu Avalanche Photo Diode 1304013834
This is all the information about APD 1304013834. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1304013834 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F04 |
| Break-through voltage: |
441.5 V |
| Voltage for Gain 100 (T=+25°C): |
413.1 V |
| Dark current: |
6.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
416 |
| Position in Box: |
40 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10652 |
| |
|
| Shipment: |
|
| Grid number: |
300 |
| Position in grid: |
7 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
26. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
413.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 413.483202 V T = -25 °C: 377.1751856 V |
| Voltage for Gain 150: |
T = +20 °C: 421.4873054 V T = -25 °C: 385.0144343 V |
| Voltage for Gain 200: |
T = +20 °C: 425.9177271 V T = -25 °C: 389.3918239 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.37145999 V-1 T = -25 °C: 4.551423212 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.464855633 V-1 T = -25 °C: 9.145992878 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.54541319 V-1 T = -25 °C: 14.03562925 V-1 |
| Break-through voltage: |
T = +20 °C: 439.213661 V T = -25 °C: 405.326095 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
