Show Hamamatsu Avalanche Photo Diode 1304013826
This is all the information about APD 1304013826. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1304013826 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C12 |
Break-through voltage: |
446.8 V |
Voltage for Gain 100 (T=+25°C): |
418.8 V |
Dark current: |
11.1 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
416 |
Position in Box: |
33 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10652 |
|
|
Shipment: |
|
Grid number: |
300 |
Position in grid: |
0 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Nov 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
26. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
418.8 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 419.6107248 V T = -25 °C: 383.237154 V |
Voltage for Gain 150: |
T = +20 °C: 427.5745827 V T = -25 °C: 391.0696628 V |
Voltage for Gain 200: |
T = +20 °C: 431.9725814 V T = -25 °C: 395.4538601 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.371491166 V-1 T = -25 °C: 4.568135258 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.406705083 V-1 T = -25 °C: 9.082462858 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.55685886 V-1 T = -25 °C: 13.80617326 V-1 |
Break-through voltage: |
T = +20 °C: 439.9591638 V T = -25 °C: 410.6183823 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history