Show Hamamatsu Avalanche Photo Diode 1304013777
This is all the information about APD 1304013777. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1304013777 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B05 |
| Break-through voltage: |
445 V |
| Voltage for Gain 100 (T=+25°C): |
416.1 V |
| Dark current: |
8.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
374 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10571 |
| |
|
| Shipment: |
|
| Grid number: |
298 |
| Position in grid: |
13 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
06. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
23. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
24. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 408.0045049 V T = -25 °C: 370.8863506 V |
| Voltage for Gain 150: |
T = +20 °C: 415.9809281 V T = -25 °C: 378.7917064 V |
| Voltage for Gain 200: |
T = +20 °C: 420.4138122 V T = -25 °C: 383.1842455 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.524307961 V-1 T = -25 °C: 4.620974621 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.895439118 V-1 T = -25 °C: 9.128237467 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.71844393 V-1 T = -25 °C: 14.152935 V-1 |
| Break-through voltage: |
T = +20 °C: 435.810284 V T = -25 °C: 398.8997565 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
