Show Hamamatsu Avalanche Photo Diode 1302013683
					
					This is all the information about APD 1302013683. If it is wrong, edit the data.
					
						
							| Subdetector specification: | 
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							| Serial: | 
							1302013683 | 
						
						
							| Type: | 
							Hamamatsu Avalanche Photo Diode | 
						
						
							| Detector: | 
							unassigned | 
						
						
							| Unit: | 
							unassigned | 
						
						
							| Preamp: | 
							0 | 
						
						
							| Current location: | 
							In transit to Mainz | 
						
						
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							| Installation information: | 
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							| Label: | 
							none | 
						
						
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							| Manufacturer information: | 
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							| Wafer position: | 
							G10 | 
						
						
							| Break-through voltage: | 
							444 V | 
						
						
							| Voltage for Gain 100 (T=+25°C): | 
							415.2 V | 
						
						
							| Dark current: | 
							10.7 nA | 
						
						
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							| Screening Logistics: | 
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							| Available: | 
							Yes | 
						
						
							| Storage Box: | 
							284 | 
						
						
							| Position in Box: | 
							35 | 
						
						
							| EP1 batch: | 
							202 | 
						
						
							| EP1 batch after irradiation: | 
							10434 | 
						
						
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							| Shipment: | 
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							| Grid number: | 
							293 | 
						
						
							| Position in grid: | 
							11 | 
						
						
							| Arrival for irradiation: | 
							29. Sep 2017 | 
						
						
							| Sent for analysis after irradiation: | 
							none | 
						
						
							| Return for assembly: | 
							none | 
						
						
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							| Irradiation: | 
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							| Date: | 
							none | 
						
						
							| Dose used: | 
							none | 
						
						
							| Temperature: | 
							none | 
						
						
							| Position: | 
							none | 
						
						
							| Bias voltage: | 
							none      | 
						
						
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							| Annealing: | 
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							| Date: | 
							none | 
						
						
							| Temperature: | 
							none | 
						
						
							| Duration: | 
							none | 
						
						
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							| Measurement results: | 
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							| Voltage for Gain 100: | 
							T = +20 °C: 415.6594397 V     T = -25 °C: 378.8420787 V | 
						
						
							| Voltage for Gain 150: | 
							T = +20 °C: 423.5957696 V     T = -25 °C: 386.7591583 V | 
						
						
							| Voltage for Gain 200: | 
							T = +20 °C: 427.9797698 V     T = -25 °C: 391.1508725 V | 
						
						
							| Gain/Voltage slope at M = 100: | 
							T = +20 °C: 4.344105293 V-1     T = -25 °C: 4.604921398 V-1 | 
						
						
							| Gain/Voltage slope at M = 150: | 
							T = +20 °C: 9.225102812 V-1     T = -25 °C: 9.109456105 V-1 | 
						
						
							| Gain/Voltage slope at M = 200: | 
							T = +20 °C: 14.41769144 V-1     T = -25 °C: 14.1630885 V-1 | 
						
						
							| Break-through voltage: | 
							T = +20 °C: 439.9824039 V     T = -25 °C: 407.1085319 V | 
						
						
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							| Notes: | 
							
								
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					Characteristics
					
						
							| Temperature | 
							Measurement | 
							Notes | 
						
						
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					Progression of the current during irradiation
					
						
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