Show Hamamatsu Avalanche Photo Diode 1302013680
					
					This is all the information about APD 1302013680. If it is wrong, edit the data.
					
						
							| Subdetector specification: | 
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							| Serial: | 
							1302013680 | 
						
						
							| Type: | 
							Hamamatsu Avalanche Photo Diode | 
						
						
							| Detector: | 
							unassigned | 
						
						
							| Unit: | 
							unassigned | 
						
						
							| Preamp: | 
							0 | 
						
						
							| Current location: | 
							In transit to Mainz | 
						
						
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							| Installation information: | 
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							| Label: | 
							none | 
						
						
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							| Manufacturer information: | 
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							| Wafer position: | 
							E09 | 
						
						
							| Break-through voltage: | 
							440 V | 
						
						
							| Voltage for Gain 100 (T=+25°C): | 
							411.7 V | 
						
						
							| Dark current: | 
							6.8 nA | 
						
						
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							| Screening Logistics: | 
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							| Available: | 
							Yes | 
						
						
							| Storage Box: | 
							284 | 
						
						
							| Position in Box: | 
							32 | 
						
						
							| EP1 batch: | 
							202 | 
						
						
							| EP1 batch after irradiation: | 
							10434 | 
						
						
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							| Shipment: | 
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							| Grid number: | 
							293 | 
						
						
							| Position in grid: | 
							8 | 
						
						
							| Arrival for irradiation: | 
							29. Sep 2017 | 
						
						
							| Sent for analysis after irradiation: | 
							none | 
						
						
							| Return for assembly: | 
							none | 
						
						
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							| Irradiation: | 
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							| Date: | 
							none | 
						
						
							| Dose used: | 
							none | 
						
						
							| Temperature: | 
							none | 
						
						
							| Position: | 
							none | 
						
						
							| Bias voltage: | 
							none      | 
						
						
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							| Annealing: | 
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							| Date: | 
							none | 
						
						
							| Temperature: | 
							none | 
						
						
							| Duration: | 
							none | 
						
						
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							| Measurement results: | 
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							| Voltage for Gain 100: | 
							T = +20 °C: 411.8284241 V     T = -25 °C: 374.9863975 V | 
						
						
							| Voltage for Gain 150: | 
							T = +20 °C: 419.8679682 V     T = -25 °C: 382.9163317 V | 
						
						
							| Voltage for Gain 200: | 
							T = +20 °C: 424.3378466 V     T = -25 °C: 387.3216325 V | 
						
						
							| Gain/Voltage slope at M = 100: | 
							T = +20 °C: 4.523137226 V-1     T = -25 °C: 4.553798143 V-1 | 
						
						
							| Gain/Voltage slope at M = 150: | 
							T = +20 °C: 8.875739763 V-1     T = -25 °C: 8.955244717 V-1 | 
						
						
							| Gain/Voltage slope at M = 200: | 
							T = +20 °C: 13.69575721 V-1     T = -25 °C: 13.9230494 V-1 | 
						
						
							| Break-through voltage: | 
							T = +20 °C: 439.828566 V     T = -25 °C: 403.2272041 V | 
						
						
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							| Notes: | 
							
								
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					Characteristics
					
						
							| Temperature | 
							Measurement | 
							Notes | 
						
						
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					Progression of the current during irradiation
					
						
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