Show Hamamatsu Avalanche Photo Diode 1302013679
This is all the information about APD 1302013679. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1302013679 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C10 |
| Break-through voltage: |
445 V |
| Voltage for Gain 100 (T=+25°C): |
417.1 V |
| Dark current: |
9.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
284 |
| Position in Box: |
31 |
| EP1 batch: |
202 |
| EP1 batch after irradiation: |
10434 |
| |
|
| Shipment: |
|
| Grid number: |
293 |
| Position in grid: |
7 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 417.9281219 V T = -25 °C: 381.2382935 V |
| Voltage for Gain 150: |
T = +20 °C: 425.8851447 V T = -25 °C: 389.1366739 V |
| Voltage for Gain 200: |
T = +20 °C: 430.299083 V T = -25 °C: 393.5239722 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.575383687 V-1 T = -25 °C: 4.496039337 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.979349535 V-1 T = -25 °C: 8.814146332 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.9436636 V-1 T = -25 °C: 15.47588139 V-1 |
| Break-through voltage: |
T = +20 °C: 439.987224 V T = -25 °C: 408.5517018 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history