Show Hamamatsu Avalanche Photo Diode 1302013674
This is all the information about APD 1302013674. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1302013674 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D10 |
| Break-through voltage: |
442 V |
| Voltage for Gain 100 (T=+25°C): |
414.3 V |
| Dark current: |
7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
284 |
| Position in Box: |
26 |
| EP1 batch: |
202 |
| EP1 batch after irradiation: |
10434 |
| |
|
| Shipment: |
|
| Grid number: |
293 |
| Position in grid: |
2 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
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|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 415.1927552 V T = -25 °C: 378.4304696 V |
| Voltage for Gain 150: |
T = +20 °C: 423.1349652 V T = -25 °C: 386.328526 V |
| Voltage for Gain 200: |
T = +20 °C: 427.5351746 V T = -25 °C: 390.6986069 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.473287805 V-1 T = -25 °C: 4.436973638 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.756234143 V-1 T = -25 °C: 8.656480963 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.36761663 V-1 T = -25 °C: 15.09418621 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9774511 V T = -25 °C: 405.7807943 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history