Show Hamamatsu Avalanche Photo Diode 1301013626
This is all the information about APD 1301013626. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1301013626 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
405.9 V |
| Dark current: |
6.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
415 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10651 |
| |
|
| Shipment: |
|
| Grid number: |
291 |
| Position in grid: |
3 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
405.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 406.0823719 V T = -25 °C: 369.5946179 V |
| Voltage for Gain 150: |
T = +20 °C: 414.0840018 V T = -25 °C: 377.5314273 V |
| Voltage for Gain 200: |
T = +20 °C: 418.5333537 V T = -25 °C: 381.8609325 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.492177557 V-1 T = -25 °C: 4.36597441 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.737210451 V-1 T = -25 °C: 8.3892468 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.20022544 V-1 T = -25 °C: 15.07905653 V-1 |
| Break-through voltage: |
T = +20 °C: 433.5979874 V T = -25 °C: 397.8384692 V |
| |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history