Show Hamamatsu Avalanche Photo Diode 1301013599
This is all the information about APD 1301013599. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1301013599 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G12 |
| Break-through voltage: |
441 V |
| Voltage for Gain 100 (T=+25°C): |
415.4 V |
| Dark current: |
9.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
267 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10691 |
| |
|
| Shipment: |
|
| Grid number: |
290 |
| Position in grid: |
1 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.3419279 V T = -25 °C: 379.5407765 V |
| Voltage for Gain 150: |
T = +20 °C: 424.2604131 V T = -25 °C: 387.3865545 V |
| Voltage for Gain 200: |
T = +20 °C: 428.6489663 V T = -25 °C: 391.7382304 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.442668035 V-1 T = -25 °C: 4.432567668 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.660850526 V-1 T = -25 °C: 8.622118124 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.01187625 V-1 T = -25 °C: 14.98222691 V-1 |
| Break-through voltage: |
T = +20 °C: 441.9616634 V T = -25 °C: 407.3419677 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
