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Show Hamamatsu Avalanche Photo Diode 0706005923


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Subdetector specification:  
Serial: 0706005923
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E11
Break-through voltage: 417 V
Voltage for Gain 100 (T=+25°C): 388.5 V
Dark current: 13.8 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 431
Position in Box: 24
EP1 batch: none
EP1 batch after irradiation: 10664
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 388.8064353 V     T = -25 °C: 352.5357859 V
Voltage for Gain 150: T = +20 °C: 396.6380788 V     T = -25 °C: 359.9917824 V
Voltage for Gain 200: T = +20 °C: 400.9647963 V     T = -25 °C: 364.1855054 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.680968529 V-1     T = -25 °C: 4.664326116 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.350808776 V-1     T = -25 °C: 9.379112521 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.70548362 V-1     T = -25 °C: 14.71483983 V-1
Break-through voltage: T = +20 °C: 416.3866277 V     T = -25 °C: 379.7642161 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 22:09:49 CEST jreher Updated APD characteristics via API.
16. Apr 2021 10:24:58 CEST jreher Updated APD location via API.
07. Apr 2021 15:58:26 CEST jreher Updated box and position via API.
30. Mar 2021 15:05:27 CEST jreher Updated APD batch assignment via API.
03. Feb 2021 18:08:18 CET jreher Updated APD location via API.
28. Apr 2014 15:40:36 CEST Tobias Imported from Hamamatsu datasheet.