Show Hamamatsu Avalanche Photo Diode 1211013475
This is all the information about APD 1211013475. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1211013475 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H09 |
| Break-through voltage: |
441 V |
| Voltage for Gain 100 (T=+25°C): |
415 V |
| Dark current: |
9.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
372 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10568 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 417.8036695 V T = -25 °C: 380.2827079 V |
| Voltage for Gain 150: |
T = +20 °C: 425.8942171 V T = -25 °C: 388.199105 V |
| Voltage for Gain 200: |
T = +20 °C: 430.4858839 V T = -25 °C: 392.5010393 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.768812023 V-1 T = -25 °C: 4.219459615 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.987266781 V-1 T = -25 °C: 8.235177389 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.18220189 V-1 T = -25 °C: 14.74640658 V-1 |
| Break-through voltage: |
T = +20 °C: 439.601952 V T = -25 °C: 407.8491735 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
