Show Hamamatsu Avalanche Photo Diode 1210013444
This is all the information about APD 1210013444. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1210013444 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E09 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
406.5 V |
| Dark current: |
10.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
418 |
| Position in Box: |
9 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10655 |
| |
|
| Shipment: |
|
| Grid number: |
284 |
| Position in grid: |
8 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 407.0104021 V T = -25 °C: 370.1798354 V |
| Voltage for Gain 150: |
T = +20 °C: 414.9756016 V T = -25 °C: 378.0221202 V |
| Voltage for Gain 200: |
T = +20 °C: 419.3942167 V T = -25 °C: 382.3819034 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.530342118 V-1 T = -25 °C: 4.548902079 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.943992894 V-1 T = -25 °C: 8.992628659 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.8409888 V-1 T = -25 °C: 14.03470287 V-1 |
| Break-through voltage: |
T = +20 °C: 434.797062 V T = -25 °C: 397.8441321 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
