Show Hamamatsu Avalanche Photo Diode 1210013427
This is all the information about APD 1210013427. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1210013427 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F04 |
| Break-through voltage: |
436 V |
| Voltage for Gain 100 (T=+25°C): |
407.5 V |
| Dark current: |
9.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
357 |
| Position in Box: |
36 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10543 |
| |
|
| Shipment: |
|
| Grid number: |
283 |
| Position in grid: |
12 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
407.5 V (not connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 408.2194201 V T = -25 °C: 371.3698975 V |
| Voltage for Gain 150: |
T = +20 °C: 416.0522961 V T = -25 °C: 379.1413357 V |
| Voltage for Gain 200: |
T = +20 °C: 420.4046046 V T = -25 °C: 383.4791785 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.542691568 V-1 T = -25 °C: 4.48393581 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.983165418 V-1 T = -25 °C: 8.938692467 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.97244055 V-1 T = -25 °C: 15.62683116 V-1 |
| Break-through voltage: |
T = +20 °C: 434.6113198 V T = -25 °C: 399.2027662 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
