Show Hamamatsu Avalanche Photo Diode 1210013410
This is all the information about APD 1210013410. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1210013410 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C10 |
| Break-through voltage: |
441 V |
| Voltage for Gain 100 (T=+25°C): |
412.6 V |
| Dark current: |
9.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
347 |
| Position in Box: |
31 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10526 |
| |
|
| Shipment: |
|
| Grid number: |
282 |
| Position in grid: |
18 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 413.5716007 V T = -25 °C: 376.7705431 V |
| Voltage for Gain 150: |
T = +20 °C: 421.5227178 V T = -25 °C: 384.6610264 V |
| Voltage for Gain 200: |
T = +20 °C: 425.9146245 V T = -25 °C: 389.0292311 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.35883096 V-1 T = -25 °C: 4.662148242 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.446218548 V-1 T = -25 °C: 9.262827075 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.60494289 V-1 T = -25 °C: 14.48795357 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9531385 V T = -25 °C: 403.8847682 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
