Show Hamamatsu Avalanche Photo Diode 1209013367
This is all the information about APD 1209013367. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1209013367 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G06 |
Break-through voltage: |
445 V |
Voltage for Gain 100 (T=+25°C): |
415.7 V |
Dark current: |
9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
376 |
Position in Box: |
27 |
EP1 batch: |
none |
EP1 batch after irradiation: |
none |
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Shipment: |
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Grid number: |
280 |
Position in grid: |
18 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
27. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
415.7 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 416.0763463 V T = -25 °C: 379.1657974 V |
Voltage for Gain 150: |
T = +20 °C: 424.038159 V T = -25 °C: 387.0625472 V |
Voltage for Gain 200: |
T = +20 °C: 428.4698088 V T = -25 °C: 391.4577773 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.528182869 V-1 T = -25 °C: 4.514381579 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.857022867 V-1 T = -25 °C: 8.930224881 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.47154767 V-1 T = -25 °C: 13.79843347 V-1 |
Break-through voltage: |
T = +20 °C: 440.0012327 V T = -25 °C: 407.696326 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history