Show Hamamatsu Avalanche Photo Diode 1209013362
This is all the information about APD 1209013362. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1209013362 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D04 |
| Break-through voltage: |
447 V |
| Voltage for Gain 100 (T=+25°C): |
419.4 V |
| Dark current: |
6.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
303 |
| Position in Box: |
43 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10373 |
| |
|
| Shipment: |
|
| Grid number: |
280 |
| Position in grid: |
13 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
419.4 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 419.5294412 V T = -25 °C: 382.4598546 V |
| Voltage for Gain 150: |
T = +20 °C: 427.5832578 V T = -25 °C: 390.4073785 V |
| Voltage for Gain 200: |
T = +20 °C: 432.0359054 V T = -25 °C: 394.7971355 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.367917336 V-1 T = -25 °C: 4.395883891 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.346227884 V-1 T = -25 °C: 8.578126195 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.30135012 V-1 T = -25 °C: 14.92066944 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9875301 V T = -25 °C: 410.2137157 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
