Show Hamamatsu Avalanche Photo Diode 1209013356
This is all the information about APD 1209013356. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1209013356 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
415.5 V |
| Dark current: |
10.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
303 |
| Position in Box: |
38 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10373 |
| |
|
| Shipment: |
|
| Grid number: |
280 |
| Position in grid: |
7 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
415.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 415.6617386 V T = -25 °C: 378.5214297 V |
| Voltage for Gain 150: |
T = +20 °C: 423.6955756 V T = -25 °C: 386.4923355 V |
| Voltage for Gain 200: |
T = +20 °C: 428.1527205 V T = -25 °C: 390.9092121 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.296886965 V-1 T = -25 °C: 4.376939282 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.066517083 V-1 T = -25 °C: 8.503596561 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.03320615 V-1 T = -25 °C: 14.61316429 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0051327 V T = -25 °C: 407.0365063 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
