Show Hamamatsu Avalanche Photo Diode 1209013351
This is all the information about APD 1209013351. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1209013351 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G05 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
414.9 V |
| Dark current: |
9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
376 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
280 |
| Position in grid: |
2 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
414.9 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 415.7245515 V T = -25 °C: 378.8457983 V |
| Voltage for Gain 150: |
T = +20 °C: 423.715635 V T = -25 °C: 386.7421827 V |
| Voltage for Gain 200: |
T = +20 °C: 428.1511943 V T = -25 °C: 391.1202964 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.280685572 V-1 T = -25 °C: 4.512779056 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.082666464 V-1 T = -25 °C: 9.073040426 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.03799738 V-1 T = -25 °C: 14.3338098 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0296491 V T = -25 °C: 407.0954206 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
