Show Hamamatsu Avalanche Photo Diode 1208013310
This is all the information about APD 1208013310. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1208013310 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B07 |
| Break-through voltage: |
439 V |
| Voltage for Gain 100 (T=+25°C): |
410.6 V |
| Dark current: |
8.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
317 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10591 |
| |
|
| Shipment: |
|
| Grid number: |
278 |
| Position in grid: |
5 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 411.3661435 V T = -25 °C: 374.6914934 V |
| Voltage for Gain 150: |
T = +20 °C: 419.2748179 V T = -25 °C: 382.554094 V |
| Voltage for Gain 200: |
T = +20 °C: 423.6577993 V T = -25 °C: 386.9228938 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.442721949 V-1 T = -25 °C: 4.390140522 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.710794063 V-1 T = -25 °C: 8.503296497 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.14556801 V-1 T = -25 °C: 14.68238988 V-1 |
| Break-through voltage: |
T = +20 °C: 438.91805 V T = -25 °C: 402.6967279 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
