Show Hamamatsu Avalanche Photo Diode 1208013309
This is all the information about APD 1208013309. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1208013309 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
437 V |
| Voltage for Gain 100 (T=+25°C): |
408.5 V |
| Dark current: |
8.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
317 |
| Position in Box: |
28 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10591 |
| |
|
| Shipment: |
|
| Grid number: |
278 |
| Position in grid: |
4 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 409.3757564 V T = -25 °C: 372.5312255 V |
| Voltage for Gain 150: |
T = +20 °C: 417.3320657 V T = -25 °C: 380.4239926 V |
| Voltage for Gain 200: |
T = +20 °C: 421.7320759 V T = -25 °C: 384.8063865 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.399049803 V-1 T = -25 °C: 4.424330769 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.504238376 V-1 T = -25 °C: 8.530179124 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.664551 V-1 T = -25 °C: 14.61890354 V-1 |
| Break-through voltage: |
T = +20 °C: 437.1335098 V T = -25 °C: 400.5821118 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
