Show Hamamatsu Avalanche Photo Diode 1208013292
This is all the information about APD 1208013292. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1208013292 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E13 |
| Break-through voltage: |
441 V |
| Voltage for Gain 100 (T=+25°C): |
411.9 V |
| Dark current: |
11.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
289 |
| Position in Box: |
40 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10201 |
| |
|
| Shipment: |
|
| Grid number: |
277 |
| Position in grid: |
12 |
| Arrival for irradiation: |
11. Jul 2016 |
| Sent for analysis after irradiation: |
15. Jul 2016 |
| Return for assembly: |
19. Sep 2016 |
| |
|
| Irradiation: |
|
| Date: |
13. Jul 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
2 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
13. Jul 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 412.6407565 V T = -25 °C: 375.8588543 V |
| Voltage for Gain 150: |
T = +20 °C: 420.6233761 V T = -25 °C: 383.7754284 V |
| Voltage for Gain 200: |
T = +20 °C: 425.0413311 V T = -25 °C: 388.1731388 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.324751723 V-1 T = -25 °C: 4.598574524 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.181498664 V-1 T = -25 °C: 9.106141657 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.34057757 V-1 T = -25 °C: 14.16476343 V-1 |
| Break-through voltage: |
T = +20 °C: 439.8922553 V T = -25 °C: 403.887212 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
