Show Hamamatsu Avalanche Photo Diode 1207013223
This is all the information about APD 1207013223. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1207013223 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A11 |
| Break-through voltage: |
445 V |
| Voltage for Gain 100 (T=+25°C): |
419.3 V |
| Dark current: |
7.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
288 |
| Position in Box: |
38 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10200 |
| |
|
| Shipment: |
|
| Grid number: |
274 |
| Position in grid: |
13 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Feb 2018 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
3 |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 418.8026583 V T = -25 °C: 381.8419927 V |
| Voltage for Gain 150: |
T = +20 °C: 426.7971682 V T = -25 °C: 389.7816084 V |
| Voltage for Gain 200: |
T = +20 °C: 431.406068 V T = -25 °C: 394.1831182 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.404925165 V-1 T = -25 °C: 4.601615034 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.756826156 V-1 T = -25 °C: 9.064288626 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 39.67949024 V-1 T = -25 °C: 14.11178137 V-1 |
| Break-through voltage: |
T = +20 °C: 433.7244071 V T = -25 °C: 407.3642774 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history