Show Hamamatsu Avalanche Photo Diode 1207013216
This is all the information about APD 1207013216. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1207013216 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E13 |
| Break-through voltage: |
445 V |
| Voltage for Gain 100 (T=+25°C): |
415.9 V |
| Dark current: |
12.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
288 |
| Position in Box: |
32 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10200 |
| |
|
| Shipment: |
|
| Grid number: |
274 |
| Position in grid: |
6 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Feb 2018 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
3 |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.134421 V T = -25 °C: 379.3293483 V |
| Voltage for Gain 150: |
T = +20 °C: 424.0665465 V T = -25 °C: 387.2232411 V |
| Voltage for Gain 200: |
T = +20 °C: 428.4698903 V T = -25 °C: 391.6119976 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.479282104 V-1 T = -25 °C: 4.496198294 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.835339976 V-1 T = -25 °C: 8.760902105 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.42596662 V-1 T = -25 °C: 15.25447639 V-1 |
| Break-through voltage: |
T = +20 °C: 439.692854 V T = -25 °C: 407.8006603 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
