Show Hamamatsu Avalanche Photo Diode 1206013159
This is all the information about APD 1206013159. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1206013159 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Giessen (mounted in Slice) |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E01 |
| Break-through voltage: |
426 V |
| Voltage for Gain 100 (T=+25°C): |
399.9 V |
| Dark current: |
12.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
293 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10207 |
| |
|
| Shipment: |
|
| Grid number: |
271 |
| Position in grid: |
9 |
| Arrival for irradiation: |
11. Jul 2016 |
| Sent for analysis after irradiation: |
15. Jul 2016 |
| Return for assembly: |
19. Sep 2016 |
| |
|
| Irradiation: |
|
| Date: |
13. Jul 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
13. Jul 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 400.8253265 V T = -25 °C: 363.7801366 V |
| Voltage for Gain 150: |
T = +20 °C: 408.847459 V T = -25 °C: 371.6738118 V |
| Voltage for Gain 200: |
T = +20 °C: 413.2938195 V T = -25 °C: 376.0624077 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.492928154 V-1 T = -25 °C: 4.613867887 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.799771201 V-1 T = -25 °C: 9.074535076 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.3722674 V-1 T = -25 °C: 14.16190058 V-1 |
| Break-through voltage: |
T = +20 °C: 425.3938147 V T = -25 °C: 389.0710296 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
