Show Hamamatsu Avalanche Photo Diode 1206013154
This is all the information about APD 1206013154. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1206013154 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D01 |
| Break-through voltage: |
429 V |
| Voltage for Gain 100 (T=+25°C): |
401.8 V |
| Dark current: |
10.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
45 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10073 |
| |
|
| Shipment: |
|
| Grid number: |
271 |
| Position in grid: |
6 |
| Arrival for irradiation: |
11. Jul 2016 |
| Sent for analysis after irradiation: |
15. Jul 2016 |
| Return for assembly: |
19. Sep 2016 |
| |
|
| Irradiation: |
|
| Date: |
13. Jul 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
13. Jul 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 402.4768961 V T = -25 °C: 365.2950456 V |
| Voltage for Gain 150: |
T = +20 °C: 410.5046789 V T = -25 °C: 373.2389277 V |
| Voltage for Gain 200: |
T = +20 °C: 414.9753013 V T = -25 °C: 377.6169849 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.573931004 V-1 T = -25 °C: 4.854995789 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.064028349 V-1 T = -25 °C: 8.334884993 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.11380857 V-1 T = -25 °C: 14.88249238 V-1 |
| Break-through voltage: |
T = +20 °C: 429.2015833 V T = -25 °C: 391.9850652 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
