Show Hamamatsu Avalanche Photo Diode 1206013104
This is all the information about APD 1206013104. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1206013104 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C07 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
406.2 V |
| Dark current: |
9.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
374 |
| Position in Box: |
5 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10570 |
| |
|
| Shipment: |
|
| Grid number: |
268 |
| Position in grid: |
16 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
06. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
23. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
24. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 407.7709151 V T = -25 °C: 370.5782901 V |
| Voltage for Gain 150: |
T = +20 °C: 415.7451371 V T = -25 °C: 378.5070168 V |
| Voltage for Gain 200: |
T = +20 °C: 420.1659975 V T = -25 °C: 382.891573 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.597230942 V-1 T = -25 °C: 4.359836957 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.14591316 V-1 T = -25 °C: 8.537858929 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.25277854 V-1 T = -25 °C: 14.82377674 V-1 |
| Break-through voltage: |
T = +20 °C: 434.8756709 V T = -25 °C: 398.0247934 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
