Show Hamamatsu Avalanche Photo Diode 1206013098
This is all the information about APD 1206013098. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1206013098 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F11 |
| Break-through voltage: |
436 V |
| Voltage for Gain 100 (T=+25°C): |
407.8 V |
| Dark current: |
12.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
372 |
| Position in Box: |
14 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10567 |
| |
|
| Shipment: |
|
| Grid number: |
268 |
| Position in grid: |
10 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
06. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
23. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
24. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 408.6351538 V T = -25 °C: 371.8685197 V |
| Voltage for Gain 150: |
T = +20 °C: 416.4798263 V T = -25 °C: 379.6922215 V |
| Voltage for Gain 200: |
T = +20 °C: 420.8067053 V T = -25 °C: 384.0190704 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.367241158 V-1 T = -25 °C: 4.658413299 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.602710006 V-1 T = -25 °C: 9.30699852 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.01638291 V-1 T = -25 °C: 14.64361951 V-1 |
| Break-through voltage: |
T = +20 °C: 435.2551105 V T = -25 °C: 399.3936677 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
