Show Hamamatsu Avalanche Photo Diode 1204012998
This is all the information about APD 1204012998. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1204012998 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A10 |
| Break-through voltage: |
440 V |
| Voltage for Gain 100 (T=+25°C): |
412.3 V |
| Dark current: |
10.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
351 |
| Position in Box: |
20 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10533 |
| |
|
| Shipment: |
|
| Grid number: |
263 |
| Position in grid: |
18 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 412.126395 V T = -25 °C: 375.4792602 V |
| Voltage for Gain 150: |
T = +20 °C: 420.0383634 V T = -25 °C: 383.3152111 V |
| Voltage for Gain 200: |
T = +20 °C: 424.4377857 V T = -25 °C: 387.6622593 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.514850122 V-1 T = -25 °C: 4.455186699 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.897760475 V-1 T = -25 °C: 8.718873413 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.51789963 V-1 T = -25 °C: 15.21847267 V-1 |
| Break-through voltage: |
T = +20 °C: 431.958745 V T = -25 °C: 402.7034693 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
