Show Hamamatsu Avalanche Photo Diode 1204012989
This is all the information about APD 1204012989. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1204012989 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
406.2 V |
| Dark current: |
13.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
351 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10532 |
| |
|
| Shipment: |
|
| Grid number: |
263 |
| Position in grid: |
9 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 406.9096645 V T = -25 °C: 370.14325 V |
| Voltage for Gain 150: |
T = +20 °C: 414.8813631 V T = -25 °C: 378.0283546 V |
| Voltage for Gain 200: |
T = +20 °C: 419.3036252 V T = -25 °C: 382.4227244 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.558499 V-1 T = -25 °C: 4.522384775 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.954851662 V-1 T = -25 °C: 8.879449281 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.84859038 V-1 T = -25 °C: 15.53168527 V-1 |
| Break-through voltage: |
T = +20 °C: 434.3850259 V T = -25 °C: 397.8314584 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
