Show Hamamatsu Avalanche Photo Diode 1204012976
This is all the information about APD 1204012976. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1204012976 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F13 |
Break-through voltage: |
441 V |
Voltage for Gain 100 (T=+25°C): |
411.9 V |
Dark current: |
12 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
335 |
Position in Box: |
16 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10502 |
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Shipment: |
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Grid number: |
262 |
Position in grid: |
16 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 412.6557942 V T = -25 °C: 375.5708078 V |
Voltage for Gain 150: |
T = +20 °C: 420.6045946 V T = -25 °C: 383.4849822 V |
Voltage for Gain 200: |
T = +20 °C: 424.9952322 V T = -25 °C: 387.8745318 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.331666774 V-1 T = -25 °C: 4.371187948 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.268369238 V-1 T = -25 °C: 8.532842894 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.45501913 V-1 T = -25 °C: 14.68402788 V-1 |
Break-through voltage: |
T = +20 °C: 438.777081 V T = -25 °C: 403.6191062 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history