Show Hamamatsu Avalanche Photo Diode 1204012976
This is all the information about APD 1204012976. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1204012976 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F13 |
| Break-through voltage: |
441 V |
| Voltage for Gain 100 (T=+25°C): |
411.9 V |
| Dark current: |
12 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
335 |
| Position in Box: |
16 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10502 |
| |
|
| Shipment: |
|
| Grid number: |
262 |
| Position in grid: |
16 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 412.6557942 V T = -25 °C: 375.5708078 V |
| Voltage for Gain 150: |
T = +20 °C: 420.6045946 V T = -25 °C: 383.4849822 V |
| Voltage for Gain 200: |
T = +20 °C: 424.9952322 V T = -25 °C: 387.8745318 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.331666774 V-1 T = -25 °C: 4.371187948 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.268369238 V-1 T = -25 °C: 8.532842894 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.45501913 V-1 T = -25 °C: 14.68402788 V-1 |
| Break-through voltage: |
T = +20 °C: 438.777081 V T = -25 °C: 403.6191062 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history